Substrate temperature dependence of deposition profile of plasma CVD carbon films in trenches

To control deposition profile of carbon films in trenches, we have studied substrate temperature and aspect ratio dependence of deposition rate of carbon films, deposited by CVD plasma of toluene diluted H2, in trenches. The deposition rates increases with decreasing the aspect ratio, because the incident radical flux per surface area in a trench increases with decreasing the aspect ratio. The deposition rate increases with decreasing the substrate temperature, because of the lower etching rate by H atoms at the lower temperature.